In this
article we will learn about the main difference between MOSFET and IGBT. We
know about the main working of MOSFET and IGBT.
Working of MOSFET
They have
generally a planner structure. The silicon oxide layer acts as insulating layer
to allow source and drain connections to the n-regions.
When gate is
made positive with respect to source then electric field draws free electrons
to P-substrate to from n-channel. It is a voltage-controlled device and the
conduction is entirely due to movement of electrons and in p-channel MOSFET
conduction is entirely due to movement of holes.
Overview of IGBT
IGBT is the
insulated gate bipolar junction transistor. It is a three terminal device
namely gate(G), collector( C), and emitter (E) it is a voltage controlled
device . IGBT has the advantage of both BJT and MOSFET, it has high input
impedance and low conduction losses. IGBT have low switching speed then MOSFET.
Other meaning of IGBT
1.
Conductivity modulated field effect transistor (COMFET)
2. Insulated
gate conductor
3. Bipolar
mode MOSFET
4. Bipolar
mode transistor
Difference between mosfet and IGBT
MOSFET IGBT
1. In the power MOSFET the decreased
in the electron mobility with increasing temperature result in a rapid
increased in the on state resistance of the channel and hence the on state
drop.
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In IGBTs, this increase in voltage
drop is very small.
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2. The on stage voltage drop increases
by a factor of 3 between room temperature and 200 degree sallies.
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Here with the identical conditions,
the increment in the on state voltage drop is very small.
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3. All highest temperature, maximum
current rating goes down to 1/3 value.
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At high ambient temperature: IGBT is
extraordinary well suited.
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4. Current sharing in multiple
paralleled MOSFETs is comparatively poor than IGBTs.
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Current sharing in multiple parallel
IGBTs is far better than power MOSFET.
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5. The turn on transients is to
MOSFETs
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Turn on transients is identical
identical to IGBTs..
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6. Power MOSFET is suited for
applications that require low blocking voltages and high operating.
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IGBT is the preferred device for
applications that require high blocking voltages and lower operating
frequencies.
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7. it is less better in power handling
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It is better in power handling than
MOSFET.
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8. MOSFET have not PN junctions.
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IGBT have PN junction
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Hence these are some difference between MOSFET and IGBT. if you will find any incorect in above article please comment in comment box.
If you want to know more about the basic difference between IGBT and MOSFET. you must watch this video.